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| 30 25 20 20 4V 10V 4.5V 3.5V 16 Vds=5V Id (A) 15 10 Vgs=3V 5 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 28 Id (A) 12 125C 8 25C 4 0 1.5 2 2.5 3 3.5 4 Vgs (Volts) Figure 2: Transfer Characteristics 1.6 Vgs=10V Normalized On-Resistance 26 Vgs=4.5V Id=8.5A 1.4 Vgs=4.5V 1.2 Rds(on) (m:) 24 22 20 18 16 14 0 5 10 15 20 Vgs=10V 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 40 1.0E+01 1.0E+00 125 40 Rds(on) (m:) Id=8.5A 1.0E-01 Is (A) 25C 1.0E-02 1.0E-03 30 125C 20 1.0E-04 25C 10 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 FET+SCHOTTKY 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics (Note 6) 10 Vds=15V Id=8.5A 1500 1250 Ciss 8 Capacitance (pF) Vgs (Volts) 1000 750 500 250 0 Crss 0 5 10 15 20 25 30 6 4 Coss FET+SCHOTTKY 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 Rds(on) limited 10.0 1ms 10ms 0.1s 1.0 Tj(max)=150C Ta=25C 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) 10 100 1s 10s DC 0 0.001 100Ps 10Ps 50 40 Vds (Volts) Figure 8: Capacitance Characteristics Tj(max)=150C Ta=25C Power (W) Id (Amps) 30 20 10 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) 40 10 D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse ZTja Normalized Transient Thermal Resistance Pd 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 0.01 100 1000 30 25 20 20 4V 10V 4.5V 3.5V 16 Vds=5V Id (A) 15 10 Vgs=3V 5 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 28 Id (A) 12 125C 8 25C 4 0 1.5 2 2.5 3 3.5 4 Vgs (Volts) Figure 2: Transfer Characteristics 1.6 Vgs=10V Normalized On-Resistance 26 Vgs=4.5V Id=8.5A 1.4 Vgs=4.5V 1.2 Rds(on) (m:) 24 22 20 18 16 14 0 5 10 15 20 Vgs=10V 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 40 1.0E+01 1.0E+00 40 Rds(on) (m:) Id=8.5A 1.0E-01 Is (A) 125C 1.0E-02 25C 1.0E-03 30 125C 20 1.0E-04 25C 10 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics 10 Vds=15V Id=8.5A 1500 1250 Ciss 8 Capacitance (pF) Vgs (Volts) 1000 750 500 Coss 250 0 Crss 0 5 10 15 20 25 30 6 4 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 Rds(on) limited 10.0 1ms 10ms 0.1s 1.0 Tj(max)=150C Ta=25C 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) 10 100 1s 10s DC 0 0.001 100Ps 10Ps 50 40 Vds (Volts) Figure 8: Capacitance Characteristics Tj(max)=150C Ta=25C Power (W) Id (Amps) 30 20 10 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) 40 10 D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse ZTja Normalized Transient Thermal Resistance Pd 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 0.01 100 1000 |
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